Advancements in Carbon Nanotube Transistors: Scaling to Sub-10 nm Nodes

Researchers from Peking University and other institutes in China have demonstrated the scaling of carbon nanotube transistors to below sub-10 nm nodes, potentially outperforming silicon-based transistors. By implementing a new contact scheme called "full contact," the researchers were able to downscale the carbon nanotube transistors while maintaining their performance advantages. This breakthrough could lead to the development of smaller and more efficient carbon nanotube-based transistors, with implications for the advancement of electronics.