SK Hynix Eyes 3D HBM Leap With EMIB, Hybrid Bonding and 2 TB/s Bandwidth
SK Hynix outlined a plan to push high-bandwidth memory (HBM) into true 3D stacking by adopting advanced packaging like Intel EMIB and hybrid bonding, aiming to go beyond 16-Hi stacks. Its HBM4 roadmap targets up to 24 Gb per DRAM die, up to 36 GB per stack, 2,048 IOs, up to 8 Gbps per IO, and around 2 TB/s bandwidth, with higher stacks and more TSVs; the company is optimizing packaging tradeoffs (MR+MUF vs TC+NCF) to address warpage, gap fill, power, and thermal challenges, while envisioning 3D integration that stacks HBM on accelerators and potential Intel collaboration.