Memristive 2D-hBN switches unlock reconfigurable GaN mmWave MMICs
Researchers demonstrate programmable millimetre-wave GaN MMICs with memristive switches made from hexagonal boron nitride (hBN) integrated directly in the BEOL. The on-chip BEOL switches operate up to 100 GHz with insertion losses around 0.3 dB and isolation above 15 dB, show two-week nonvolatile state retention, maintain stable on-state resistance up to 175 °C, and support linear power handling up to 18 dBm with an extrapolated 1‑dB compression point near 30.5 dBm. A compact 1T1M driver scheme achieves about 3,250 switching cycles; the work also demonstrates memristive-configurable attenuators, power dividers and programmable resonators on the GaN MMIC platform, pointing to more compact, cost-efficient reconfigurable RF front-ends for future 5G/6G mmWave systems.
