Twistronics and Spintronics Merge for Quantum Electronics Advancement

Researchers have introduced the twist to control the spin degree of freedom, using CrI3, an interlayer-antiferromagnetic-coupled vdW material, as their medium. The result of stacked antiferromagnets twisting onto itself was made possible by having fabricated samples with different twisting angles. The observed voltage-assisted magnetic switching and magnetoelectric effect may lead to promising memory and spin-logic devices. This research suggests a new class of material platform for spintronics and magnetoelectronics, opening the opportunity to pursue new physics as well as spintronic applications.