All articles tagged with #sputtering
NASA has ended the MAVEN Mars orbiter mission after the spacecraft lost contact behind Mars in December 2025 despite reset attempts. Launched in 2013 to study how solar wind erodes Mars' atmosphere, MAVEN delivered major insights into atmospheric escape, including sputtering, and helped relay data for Curiosity and Perseverance. The probe will remain in Mars orbit for decades, but NASA will not attempt to reestablish communications.
NASA's MAVEN spacecraft has provided direct evidence that solar winds and sputtering have played a crucial role in stripping Mars of its atmosphere, especially during periods of intense solar activity, leading to the loss of water and habitability, and offering insights into planetary evolution and the potential for life beyond Earth.
NASA's MAVEN spacecraft has directly observed sputtering, a process where solar wind particles strip away Mars' atmosphere, providing evidence that this mechanism significantly contributed to the planet's loss of water and transition to a dry, cold state.
NASA's MAVEN mission has found evidence of sputtering, a process where atoms are knocked out of Mars' atmosphere by charge particles, which could explain how the planet lost its water and nearly all of its atmosphere, shedding light on Mars' past habitability.
Researchers at Tohoku University have made advancements in phase change memory by using sputtering to create niobium telluride (NbTe4), a material with superior storage and thermal capabilities. NbTe4 exhibits an ultra-low melting point and high crystallization temperature, offering reduced reset energies and improved thermal stability. It demonstrated a significant reduction in operation energy and fast-switching speed, positioning it as a promising next-generation phase change memory material.
Researchers from Tohoku University have discovered a promising material, niobium telluride (NbTe4), for next-generation phase change memory. Using sputtering, they fabricated large-area 2D vdW tetra-chalcogenides and found that NbTe4 exhibits an ultra-low melting point and high crystallization temperature, offering reduced reset energies and improved thermal stability. NbTe4 demonstrated a significant reduction in operation energy, a high data retention temperature, and fast-switching speed, positioning it as an ideal material for addressing current challenges in phase change memory technology.