All articles tagged with #lpddr5x
Intel unveils Crescent Island, a Xe3P-based data-center GPU with four compute slices totaling 32 cores, up to 480 GB of LPDDR5X memory, and a 350W TDP on air-cooled PCIe cards, engineered for dense, cost-efficient AI inference workloads with broad data-type support and an open software stack; sampling is planned for the second half of 2026.
Engineering samples of Qualcomm's Snapdragon 8 Elite Gen 6 Pro appeared for sale in China at around $42 before the official launch, showing a heatsink similar to Samsung's HPB and a die marked SM8975-100-BC, with LPDDR5X support (not LPDDR6), hinting at possible design changes before the Snapdragon Summit.
Framework’s Laptop 13 Pro finally delivers notably better battery life thanks to a larger 74Wh battery and a Core Ultra Series 3/LPCAMM2 RAM setup, plus a touchscreen and refined build, but the upgrade comes at a premium price driven by RAM shortages and new module formats. Upgrading older Laptop 13 units is possible but requires replacing multiple parts (battery, bottom case, keyboard cover) and can push the total cost into premium territory, making it a strong but expensive option for existing owners and Linux enthusiasts alike.
Rumor suggests the Tensor G7 may debut with LPDDR5X and LPDDR6 RAM, potentially enabling higher memory bandwidth and stronger on-device AI for the Pixel 12 Pro, but details are unconfirmed and dependent on packaging/thermals, so take with caution.
Apple’s A20 Pro will not feature LPDDR6 RAM; instead it supports six-channel LPDDR5X on a 96-bit bus, boosting memory bandwidth to meet AI workloads, with DRAM separated from the die via WMCM packaging to improve heat dissipation and sustained performance.
AMD unveiled the Ryzen AI Max 400 series, a Strix Halo refresh that doubles down on memory: the SoC now supports up to 192 GB of LPDDR5X unified memory (up to 160 GB available to the iGPU), while Zen 5 CPUs boost to 5.20 GHz and RDNA 3.5 GPUs to 3.00 GHz, and the integrated NPU climbs to 55 TOPS. The lineup includes Ryzen AI Max+ PRO 495, Max PRO 490, and PRO 485, with consumer variants planned later. The memory upgrade targets AI workloads and 300B+ parameter LLMs, marking a major memory-focused refresh for Strix Halo.
NVIDIA's upcoming N1 gaming SoC has appeared on a laptop motherboard paired with 128GB of LPDDR5X RAM, with OEM partners Dell and Lenovo confirming a 2026 launch. The N1/N1X will use Arm-based CPU cores (10 Cortex-X925 and 10 Cortex-A725) and a Blackwell GPU up to 6,144 CUDA cores, and will offer typical laptop IO (USB-C/Thunderbolt, HDMI) while targeting Windows on Arm with Windows 11 26H1 support.
Apple’s first foldable iPhone will use 12GB of RAM supplied by Samsung, with DRAM shipments set to begin in Q2 2026 as Apple aligns production; Samsung reportedly negotiated a higher price due to tight memory supply from the AI server boom, leading Apple to shift more RAM orders to Samsung for predictable deliveries, though SK hynix and Micron are expected to contribute later. The book-style device is said to have a 4:3 aspect ratio and is slated to launch in September alongside the iPhone 18 Pro/Max.
Apple unveiled the low-cost MacBook Neo starting at $599 in the U.S., but the device is limited to 8 GB of RAM with no upgrade options. The RAM cap stems from the A18 Pro SoC being packaged with memory directly above it using TSMC’s Integrated Fan-Out Package on Package (InFO-PoP), reducing PCB area and keeping costs down. The 8 GB LPDDR5X memory modules are integrated into the package, and Apple says macOS memory management remains adequate for this configuration, though the RAM limit has drawn criticism.
Apple's upcoming iPhone 18 is expected to feature 12GB of RAM, similar to the iPhone 17 Pro, marking a significant upgrade for the base model, driven by increased demand for higher memory capacity and potential AI capabilities. The release is staggered, with the base iPhone 18 launching in spring 2026, and Apple sourcing more LPDDR5X DRAM chips from Samsung, Micron, and SK Hynix to support this upgrade.
Samsung is increasingly sourcing memory chips from Micron due to lower yields in its own semiconductor division, with Micron expected to supply a larger share for the Galaxy S25 and S26 series, potentially including a worldwide 16GB RAM option for the Galaxy S26.
Samsung has completed the validation of its 10.7Gbps LPDDR5X DRAM for use with MediaTek's upcoming Dimensity 9400 SoC, offering over 25% improvement in power consumption and performance. This collaboration aims to enhance battery life and on-device AI features for mobile devices, solidifying Samsung's leadership in low-power, high-performance DRAM technology.
Samsung has developed the industry's fastest LPDDR5X DRAM, offering 10.7Gbps performance, 30% more capacity, and 25% higher power efficiency. This innovation is optimized for AI applications and is expected to expand into various sectors including PCs, accelerators, servers, and automobiles. The LPDDR5X is designed to meet the increasing demand for low-power, high-performance memory in the on-device AI era, with mass production scheduled to begin in the second half of the year.
Micron has launched the LPCAMM2, a high-performance low-power memory solution that improves performance, power efficiency, and space consumption compared to traditional SODIMMs. Integrated with LPDDR5X DRAM, it offers faster peak bandwidth for AI inference at the edge and outperforms SODIMMs in various workloads. The company is collaborating with industry leaders like Lenovo, Compal, and Intel to deploy the chip for real-life use cases, signaling a move back to profitability. Additionally, the expectation of supply normalization and the boom in AI spending are expected to drive demand for its memory chips.
Samsung unveiled its HBM3E memory called Shinebolt, offering improved memory bandwidth and speed for high-end processors and GPUs. The company also provided updates on the development of its GDDR7 VRAM, LPDDR5X CAMM memory, and Detachable AutoSSD. Samsung's HBM3E memory is faster than similar chips from Micron and SK Hynix, with data transfer speeds of 9.8Gbps per pin and capacities of up to 36GB. The company is also working on HBM4 memory using advanced chip manufacturing and packaging technologies. Additionally, Samsung announced the development of GDDR7 memory with lower power consumption, a petabyte-scale SSD, and detachable LPDDR5X DRAM for laptops and PCs. For automotive use, Samsung introduced Detachable AutoSSD with high data transfer speeds and storage capacity.